Silicon Wafer
We are proud of offering silicon wafer with high quality and attractive price under quality control in depth so that you are assured of good value added products from us.
Our main product series include: IC level and solar grade silicon ingot and wafers.
provide semiconductor wafer measured from four to six inches.
Specifications are as follows:
| Items | General Specification of Semiconductor Wafer | ||||||||
| 4 inch | 5 inch | 6 inch | |||||||
| Resistivity(Ω/cm) | P-Type doped: Boron, 0.001-0.01, 0.01-0.5, >0.5 P++, P+, P- | ||||||||
| N-Type doped: As, Phos, Sb, 0.001-1, 1-150 | |||||||||
| Diameter tolerance(mm) | ±0.2 | ±0.2 | ±0.2 | ||||||
| Orientation | (100), (111) | (100), (110), (111) | (100), (110), (111) | ||||||
| Orientation tolerance | ±0.15° | ±0.15° | ±0.15° | ||||||
| Edge Profile | T/R | T/R | T/R | ||||||
| Edge Condition | 11/22 Ground | 11/22 Ground | 11/22 Ground/Polished | ||||||
| Thickness(μm) | 300-650 | 400-650 | 550-750 | ||||||
| Thickness tolerance(μm) | ±15 | ±15 | ±15 | ||||||
| Backside Treatment | Etch | Poly | SiO2 | Etch | Poly | SiO2 | Etch | Poly | SiO2 |
| Bow(μm) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | ±25 | ±25(Before CVD) | |||
| Warp(μm) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | ≦25 | ≦25(Before CVD) | |||
| Options | Laser marking, Poly-back, SiO2 seal, Back side damage | ||||||||
Solar grade ingots and wafers: Nexteck offer different kind of ingots and wafers as customer’s requirements.
MONO and MULTI ingots or 125mm and 156mm wafers are available.
Specifications of our 156mm Mono and Multi silicon wafers for your reference.
| Specifications of monosilicon wafer | Specifications of Polycrystalline silicon | |
| Category | 156*156mm(Mono wafer) | 156*156mm (multi wafer) |
| Growing method | CZ | |
| Type | P | P |
| Dopant | Boron | Boron |
| Crystal Orientation | <100>+/-3 deg | |
| Carbon content (atom/cm3) | < 5*1016 | < 5*1017 |
| Oxygen content (atom/cm3) | < 1.1*1018 | < 1*1018 |
| Etch Pit Defects ( /cm3) | <= 3000 | |
| Resistivity (ohm-cm) | 0.5~3/3~6 | 0.5~3 |
| Minorirty Carrier Lifetime (μs) | >10 | >=2 |
| Dimension (mm) | 156+/-0.5 | 156+/-0.5 |
| Thickness (μm) | 200+/-20 | 200+/-20 |
| TTV (μm) | <=30 | <=30 |
| Bow/Warp (μm) | <100 | <50 / <100 |
| Surface Saw Damage Depth (um) | <=15 | <=20 |
| Edge (Chip) |
Depth≦0.5mm， Vertical≦1.0mm, Defect≦2 |
Depth≦0.5mm， Length≦3.0mm, Defect≦2 |